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产品名称 参数 产品名称 参数
FM041.01A3 ▪ 14 photodiodes ▪ Open circuit voltage is 6.5 V ▪ Short circuit current is 2 µA ▪ Switching off is 100 µs ▪ Protection circuit against short circuit at load ▪ Limit current 320-530 mA (AC), 640-1060 (DC) ▪ Thyristor discharge circuit ▪ The design is improved for “up” LED ▪ For operation of MOS- transistors with threshold voltage 1-2 V FM041.01A2 ▪ 14 photodiodes ▪ Open circuit voltage is 6.5 V ▪ Short circuit current is 2 µA ▪ Switching off is 100 µs ▪ Protection circuit against short circuit at load ▪ Limit current 170-380 mA (AC) ▪ Thyristor discharge circuit ▪ The design is improved for “up” LED ▪ For operation of MOS-transistors with threshold voltage 1-2 V
Scat-2(SC142-01) ▪ 12 photodiodes ▪ Open voltage is 5.8 V ▪ Short current is 2 µA ▪ Switching off is 100 µs ▪ Thyristor discharge circuit ▪ The design is improved for “askew” LED ▪ For operation of MOS- transistors with threshold voltage 1-2 V FM5040 ▪ 16 photodiodes ▪ Open circuit voltage is 7 V ▪ Short circuit current is 5 µA ▪ Without discharge circuit ▪ Small size of 1.0х0.9 mm ▪ For operation as a sensor
FM5037 FM15D ▪ 2x15 photodiodes ▪ Two independent matrixes on one chip ▪ Open circuit voltage is 7.5 V ▪ Short circuit current is 2 µA ▪ Switching off is 100 µs ▪ Thyristor discharge circuit ▪ The design is improved for “up” LED ▪ For operation of MOS- transistors with threshold voltage 1-2 V
FM24 ▪ 20 photodiodes ▪ Open circuit voltage is 12.4 V ▪ Short circuit current is 2 µA ▪ Switching off is 100 µs ▪ Thyristor discharge circuit ▪ The design is improved for “up” LED ▪ For operation of MOS- transistors with threshold voltage 2-4 V FM043 ▪ 14 photodiodes ▪ Open circuit voltage is 6.5 V ▪ Short circuit current is 1,5 µA ▪ Switching off is 100 µs ▪ Thyristor discharge circuit ▪ The design is improved for “up” LED ▪ For operation of MOS- transistors with a threshold voltage of 1-2 V ▪ Small size of 1.0х1.22 mm
FM037 ▪ 14 photodiodes ▪ Open circuit voltage is 6.5 V ▪ Short circuit current is 2 µA ▪ Switching off is 100 µs ▪ Protection circuit against short circuit at load ▪ Thyristor discharge circuit ▪ The design is improved for “up” LED ▪ For operation of MOS- transistors with threshold voltage 1-2 V FM034MP Chip size ( 芯片尺寸): 1.2x1.4mm ±0.1mm Chip thickness ( 芯片厚度): 0.3mm ±0.04mm Pad size ( 衬垫尺寸): 0.14x0.14 mm Pad Material ( 衬垫材料): – Aluminum ( 铝) Backside polysilicon ( 背面多晶硅)